Abstract

As technology advances, the demand for micro light-emitting diodes (μLEDs) in displays and data communication is increasing. However, as μLEDs shrink in size, the proportion of sidewall area increases, which resulted in non-radiative recombination effects and significantly reduce the external quantum efficiency (EQE). In general, the non-radiative recombination was resulted from the plasma etching during the mesa and isolation processing. To overcome the above issues, ion implantation can be used to insulate the structure of μLEDs among the pixcels.

In this talk, ion implantation technology was introduced for the mesa and isolation processes of the devices. The effect of different ion sources with different incident energies on the μLEDs performance will be presented during the conference. More detained frequency response of μLEDs will also be presented.

Biography

Prof. Ray-Hua Horng received the B.S., and Ph.D. degrees from National Cheng Kung University and National Sun Yat-Sen University, Taiwan, in 1987 and 1993, respectively, all in electrical engineering. She has worked in the field of III–V compound materials by MOCVD as an Associate Researcher with Telecommunication Laboratories, Chunghwa Telecom Co. Ltd., Taoyuan, Taiwan. She is currently Chair Professor with the Institute of Electronics, National Yang Ming Chiao Tung University.